PART |
Description |
Maker |
MB84VD21094 MB84VD21094-85-PBS MB84VD21094-85-PTS |
16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
|
FUJITSU[Fujitsu Media Devices Limited]
|
IS42S16800E-6BLI IS42S16800E-6TL IS42S81600E IS42S |
16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc
|
K8D1716UTC-TC09 K8D1716UTC-FI09 K8D1716UTC-FI07 K8 |
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
SST30VR021 SST30VR021-500-C-U1 SST30VR021-500-C-WH |
2 Mbit ROM SRAM T1/E1 Transformer 2 Mbit ROM 1 Mbit / 2Mbit / 256 Kbit SRAM ROM/RAM Combo SPECIALTY MEMORY CIRCUIT, PDSO32 2 Mbit ROM 1 Mbit / 2Mbit / 256 Kbit SRAM ROM/RAM Combo SPECIALTY MEMORY CIRCUIT, UUC 2 Mbit ROM 1 Mbit / 2Mbit / 256 Kbit SRAM ROM/RAM Combo 2兆光兆位/ 2Mbit 256千位的SRAM ROM / RAM内存组合
|
Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
EDD2516AKTA-5-E EDD2516AKTA-5C-E |
256M bits DDR SDRAM (16M words x16 bits, DDR400)
|
Elpida Memory
|
K8D1716U K8D1716UT K8D1716UB K8D1716UBB-TC07 K8D17 |
16M Dual Bank NOR Flash Memory 16M BIT (2M X8/1M X16) DUAL BANK NOR FLASH MEMORY
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K8D1716UBB K8D1716UTB K8D1716UTB-TC09 K8D1716UTB-Y |
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory 16M Dual Bank NOR Flash Memory
|
http:// Samsung
|
M28F220-90M1TR M28F220-90M6TR -M28F220 STMICROELEC |
256K X 8 FLASH 12V PROM, 90 ns, PDSO44 2Mbit (256Kb x8 or 128Kb x16, Boot Block) Flash Memory(2Mb???瀛???ī 256K X 8 FLASH 12V PROM, 70 ns, PDSO44
|
STMICROELECTRONICS
|
MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的(x 8/x16)闪 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73 Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes CONN, M HEADER ST 1X2 .230 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|
HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG Infineon Technologies AG
|